Deposition of polycrystal Si film

Details Deposition of polycrystal Si film Deposition of polycrystal Si film

1996-03-08

1999-09-21

Niebling, John F.

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Polycrystalline semiconductor

438507, 438508, H01L 2170

Patent

active

059566027

ABSTRACT:
The present invention provides a method for depositing polycrystal Si films, including n-type and p-type polycrystal Si films, using a material gas, a doping gas, and hydrogen gas. This method comprises a film-forming time-period having:

REFERENCES:
patent: 5019887 (1991-05-01), Niwa et al.
patent: 5242530 (1993-09-01), Sandhu et al.
patent: 5288658 (1994-02-01), Ishihara
patent: 5332689 (1994-07-01), Batey et al.
R. Reif et al., Plasma Enhanced Chemical Vapor Deposition, in Thin Film Processes II, edited by Vossen et al., Academic Press, pp. 542-543 (no month given), 1991.

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