Deposition of phosphosilicate glass film

Details Deposition of phosphosilicate glass film Deposition of phosphosilicate glass film

2008-01-22

2008-01-22

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S783000, C438S786000, C257SE21275

Reexamination Certificate

active

07320944

ABSTRACT:
A method of forming a phosphosilicate glass, includes flowing a pre-deposition gas comprising an inert gas into a deposition chamber containing a substrate, where the temperature of the substrate is at a pre-deposition temperature of at least 400° C; continuously increasing the temperature of gas in the chamber to a deposition temperature and simultaneously continuously increasing a flow rate of phosphine and silane until a phosphine:silane deposition ratio is achieved; and depositing the phosphosilicate glass on the substrate at the deposition temperature and at the phosphine:silane deposition ratio.

REFERENCES:
patent: 6352591 (2002-03-01), Yieh et al.
patent: 7001854 (2006-02-01), Papasouliotis et al.
patent: 2001/0054387 (2001-12-01), Frankel et al.
Encyclopedia of Chemical Technology, Kirk-Othmer, vol. 14, pp. 677-709, (1995).

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