Deposition of highly doped silicon dioxide films

Details Deposition of highly doped silicon dioxide films Deposition of highly doped silicon dioxide films

1997-06-19

1999-12-28

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419215, 501 12, 423338, C23C 1434

Patent

active

060076852

ABSTRACT:
The specification describes sputtering processes for the deposition of silicon dioxide films doped with high levels of oxides or other materials to alter the optical and/or electrical characteristics of the films. Sol gel methods are used to prepare composite sputtering targets of ultra fine mixtures of materials so the composition of the sputtered films replicate the composition of the target.

REFERENCES:
patent: 3959174 (1976-05-01), Winyall et al.
patent: 4663008 (1987-05-01), Takeoka et al.
patent: 4786618 (1988-11-01), Shoup
patent: 4940523 (1990-07-01), Takeshima
patent: 5196382 (1993-03-01), Hench et al.
patent: 5215943 (1993-06-01), Anderson et al.
patent: 5232569 (1993-08-01), Nelson et al.
patent: 5240488 (1993-08-01), Chandross et al.
patent: 5427665 (1995-06-01), Hartig et al.
patent: 5637507 (1997-06-01), Wicks et al.

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