Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1991-05-16
1998-09-01
King, Roy V.
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427249, 4272557, 427573, 427575, 20419222, B05D 306, C23C 1626
Patent
active
058008799
ABSTRACT:
An adhering, continuous diamond film of optical or semiconductor quality is deposited on a substrate by forming on the substrate a layer of a nitride and then depositing diamond on the nitride without mechanical treatment or seeding of the substrate or the nitride. A substrate of silicon or silicon carbide has been used by depositing a layer of silicon dioxide directly on the substrate and then directly depositing the nitride layer on the silicon dioxide. A polycrystalline diamond film has been deposited by heating the substrate and nitride layer in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon with the nitride being a refractory nitride to withstand the temperature at which the diamond is deposited. Deposition of the diamond is facilitated by adding oxygen to the mixture after a sufficient thickness of diamond is deposited to protect the nitride layer from oxidation.
REFERENCES:
patent: 3030188 (1962-04-01), Eversole
patent: 4434188 (1984-02-01), Kamo et al.
patent: 4707384 (1987-11-01), Schachner et al.
patent: 4724169 (1988-02-01), Keem et al.
patent: 4816286 (1989-03-01), Hirose
patent: 4961958 (1990-10-01), Desphandey et al.
patent: 4985227 (1991-01-01), Ito et al.
patent: 4988421 (1991-01-01), Drawl et al.
patent: 5023068 (1991-06-01), Jones
Vitkavage et al, "Plasma Enhanced Chemical Vapor Deposition of Poly-Crystalline Diamond and Diamondlike Films", J. Vac. Sci. Tech. A 6(3) May/Jun. 1988 pp. 1812-1815.
M. Pinneo, "CVD Diamond: Improving on Nature", Lasers & Optronics; Aug. 1990, pp. 49-53.
K. Spear, "Growth of Crystalline Diamond from Low-Pressure Gases", Earth and Mineral Sciences; Pennsylvania State University; vol. 56, No. 4, Summer 1987 pp. 53-59.
Johnson Linda F.
Klemm Karl A.
Moran Mark B.
Church Stephen J.
King Roy V.
Sliwka Melvin J.
LandOfFree
Deposition of high quality diamond film on refractory nitride does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Deposition of high quality diamond film on refractory nitride, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Deposition of high quality diamond film on refractory nitride will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-267866