Deposition of group III-nitrides on Ge

Details Deposition of group III-nitrides on Ge Deposition of group III-nitrides on Ge

2011-06-21

2011-06-21

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with preceding...

C257S189000, C257S200000, C257S615000, C257SE21098, C257SE29089, C438S483000, C438S492000, C438S604000

Reexamination Certificate

active

07964482

ABSTRACT:
The present invention provides a method for depositing or growing a group III-nitride layer, e.g. GaN layer (5), on a substrate (1), the substrate (1) comprising at least a Ge surface (3), preferably with hexagonal symmetry. The method comprises heating the substrate (1) to a nitridation temperature between 400° C. and 940° C. while exposing the substrate (1) to a nitrogen gas flow and subsequently depositing the group III-nitride layer, e.g. GaN layer (5), onto the Ge surface (3) at a deposition temperature between 100° C. and 940° C. By a method according to embodiments of the invention, a group III-nitride layer, e.g. GaN layer (5), with good crystal quality may be obtained. The present invention furthermore provides a group III-nitride/substrate structure formed by the method according to embodiments of the present invention and a semiconductor device comprising at least one such structure.

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Siegle et al., “High-quality GaN growth by molecular beam epitaxy on Ge(001),” Mat. Res. Soc. Symp. Proc., Vo. 542, (1999), 451.
Trybus et al., “Growth of InN on Ge substrate by molecular beam epitaxy,” Journal of Crystal Growth 279, (2005), 311-315.

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