Deposition of films onto large area substrates using modified re

Details Deposition of films onto large area substrates using modified re Deposition of films onto large area substrates using modified re

1989-08-08

1990-06-05

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419212, 20429806, 20429811, 20429819, C23C 1434

Patent

active

049311581

ABSTRACT:
An apparatus and process for reactive magnetron sputtering wherein film deposition is controlled by placing a grid located over the primary plasma and an auxiliary plasma adjacent to the substrate. The auxiliary plasma is produced using a positively biased d.c. probe. Control of the deposited film properties is provided by varying the d.c. probe voltage and open area of the wire grid.

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