Deposition of dopant impurities and pulsed energy drive-in

Details Deposition of dopant impurities and pulsed energy drive-in Deposition of dopant impurities and pulsed energy drive-in

1997-06-16

1999-06-29

Bowers, Charles

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

By application of corpuscular or electromagnetic radiation

438557, 438558, H01L 21223

Patent

active

059181400

ABSTRACT:
A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

REFERENCES:
patent: 4147563 (1979-04-01), Narayan et al.
patent: 5316969 (1994-05-01), Ishida et al.

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