Deposition of carbon into nitride layer for improved selectivity

Details Deposition of carbon into nitride layer for improved selectivity Deposition of carbon into nitride layer for improved selectivity

1997-09-29

1999-08-10

Kunemund, Robert

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438724, C23C 1400, C23C 1448

Patent

active

059358734

ABSTRACT:
A method for forming a Self Aligned Contact in a semiconductor device includes incorporating carbon into a nitride layer during or following the formation of the nitride layer on a semiconductor substrate.

REFERENCES:
patent: 5096842 (1992-03-01), Nihira et al.
patent: 5244822 (1993-09-01), Nihira et al.
patent: 5556506 (1996-09-01), Contreras et al.

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