Deposition of an inter layer dielectric formed on semiconductor

Details Deposition of an inter layer dielectric formed on semiconductor Deposition of an inter layer dielectric formed on semiconductor

1996-02-29

1999-02-16

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257752, H01L 2348

Patent

active

058724010

ABSTRACT:
A method of depositing an inter layer dielectric. A first layer using plasma enhanced chemical vapor deposition (CVD) is deposited. It is followed by a second layer, deposited using sub atmospheric CVD. The second layer is argon sputter etched.

REFERENCES:
patent: 3617463 (1971-11-01), Gregor et al.
patent: 4702795 (1987-10-01), Douglas
patent: 4797375 (1989-01-01), Brownell
patent: 4872947 (1989-10-01), Wang et al.
patent: 4952274 (1990-08-01), Abraham
patent: 4983540 (1991-01-01), Yamaguchi et al.
patent: 5270264 (1993-12-01), Andideh et al.
patent: 5514624 (1996-05-01), Morozumi
patent: 5563104 (1996-10-01), Jang et al.
patent: 5679606 (1997-10-01), Wang et al.
patent: 5691573 (1997-11-01), Avanzino et al.
Kotani, H., et al., "Sputter Etching Planarization for Multilevel Metallization", J. Electrochem. Soc.: Solid State Science & Tech. Mar. 1983, pp. 645-648.
Vossen, J., et al., "Back Scattering of Material Emitted from RF-Sputtering Targets", RCA Review, Jun. 1970, pp. 293-305.
Valletta R.M., "Control of Edge Profile in Sputter Etching", IBM Tech. Disc. Bull. vol. 10, No. 12, May. 1968, p. 1974.

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