Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-02-16
1999-06-29
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438656, 438681, 438653, H01L 21441
Patent
active
059181494
ABSTRACT:
The present semiconductor device and method of fabrication thereof includes the provision of a trench or via hole in a dielectric, with a barrier layer thereon extending into the trench or via hole. A layer of titanium is provided over the barrier layer, also extending into the trench or via hole, and aluminum or aluminum alloy is provided over the titanium layer. The barrier layer provides good conformal coverage while also preventing outgassing of the dielectric from adversely affecting the conductor. The barrier layer also serves as a wetting agent for the deposition and flowing of aluminum or aluminum alloy. The titanium layer can be extremely thin, or non-existent, so as to avoid significant growth of TiAl.sub.3 and the problems attendant thereto.
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Alvis Roger
Besser Paul R.
Iacoponi John A.
Advanced Micro Devices , Inc.
Everhart Caridad
Kwok Edward C.
Woo Philip W.
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