Deposition methods and stacked film formed thereby

Details Deposition methods and stacked film formed thereby Deposition methods and stacked film formed thereby

2001-12-10

2009-06-09

Chen, Bret (Department: 1792)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S192240, C427S062000

Reexamination Certificate

active

07544273

ABSTRACT:
A method of making a film having a uniform thickness and having a crystal axis parallel to a main surface of a substrate is described. In a deposition method, a film is formed by scattering a deposition material from a target (12) surface and growing the scattered deposition material on a main surface (100a) of a substrate (100). The method includes the steps of positioning the substrate (100) into a first state where the distance between one end (100f) and the target (12) is small and the distance between the other end (100e) and the target material (12) is relatively large, forming a first film (110) on the substrate (100) in the first state, positioning the substrate (100) into a second state where the distance between one end (100f) and the target (12) is large and the distance between the other end (100e) and the target (12) is small, and. forming a second film (120) on the first film (110) in the second state.

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