Deposition method of insulating layers having low dielectric...

Details Deposition method of insulating layers having low dielectric... Deposition method of insulating layers having low dielectric...

2005-08-23

2005-08-23

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S067000, C257S069000, C257S072000, C257S059000, C438S030000, C438S149000, C438S158000, C438S160000

Reexamination Certificate

active

06933568

ABSTRACT:
The present invention relates to a process for vapor depositing a low dielectric insulating film, a thin film transistor using the same, and a preparation method thereof, and more particularly to a process for vapor deposition of lowdielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device. The present invention also relates to a thin film transistor using the process and preparation method thereof.

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patent: 11-330070 (1999-11-01), None

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