Deposition method of insulating layers having low dielectric...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S057000, C257S072000, C257S347000, C257SE21414, C257SE21703

Reexamination Certificate

active

07902549

ABSTRACT:
The present invention relates to a process for vapor depositing a low dielectric insulating film, a thin film transistor using the same, and a preparation method thereof, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device. The present invention also relates to a thin film transistor using the process and preparation method thereof.

REFERENCES:
patent: 6077764 (2000-06-01), Sugiarto et al.
patent: 6147009 (2000-11-01), Grill et al.
patent: 6303518 (2001-10-01), Tian et al.
patent: 6674495 (2004-01-01), Hong et al.
patent: 7095460 (2006-08-01), Choi et al.
patent: 7102168 (2006-09-01), Rhee et al.
patent: 7190421 (2007-03-01), Hong et al.
patent: 4228529 (1993-03-01), None
patent: 03-036269 (1991-02-01), None
patent: 04-191374 (1992-07-01), None
patent: 08-203892 (1996-08-01), None
patent: 10-242143 (1998-09-01), None
patent: 10-275804 (1998-10-01), None
patent: 11-054504 (1999-02-01), None
patent: 2001-051303 (2001-02-01), None
patent: 2001-100187 (2001-04-01), None
patent: 2001-242630 (2001-09-01), None
patent: 2001-284453 (2001-10-01), None
patent: 2001-326222 (2001-11-01), None
patent: 2002-026331 (2002-01-01), None
patent: 2005-0526387 (2005-09-01), None
WO03/097897 (English Abstract of JP 2005-526387).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Deposition method of insulating layers having low dielectric... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Deposition method of insulating layers having low dielectric..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Deposition method of insulating layers having low dielectric... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2667989

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.