Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-03-08
2011-03-08
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S057000, C257S072000, C257S347000, C257SE21414, C257SE21703
Reexamination Certificate
active
07902549
ABSTRACT:
The present invention relates to a process for vapor depositing a low dielectric insulating film, a thin film transistor using the same, and a preparation method thereof, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device. The present invention also relates to a thin film transistor using the process and preparation method thereof.
REFERENCES:
patent: 6077764 (2000-06-01), Sugiarto et al.
patent: 6147009 (2000-11-01), Grill et al.
patent: 6303518 (2001-10-01), Tian et al.
patent: 6674495 (2004-01-01), Hong et al.
patent: 7095460 (2006-08-01), Choi et al.
patent: 7102168 (2006-09-01), Rhee et al.
patent: 7190421 (2007-03-01), Hong et al.
patent: 4228529 (1993-03-01), None
patent: 03-036269 (1991-02-01), None
patent: 04-191374 (1992-07-01), None
patent: 08-203892 (1996-08-01), None
patent: 10-242143 (1998-09-01), None
patent: 10-275804 (1998-10-01), None
patent: 11-054504 (1999-02-01), None
patent: 2001-051303 (2001-02-01), None
patent: 2001-100187 (2001-04-01), None
patent: 2001-242630 (2001-09-01), None
patent: 2001-284453 (2001-10-01), None
patent: 2001-326222 (2001-11-01), None
patent: 2002-026331 (2002-01-01), None
patent: 2005-0526387 (2005-09-01), None
WO03/097897 (English Abstract of JP 2005-526387).
Hong Wan-Shick
Jung Kwan-Wook
Yang Sung-Hoon
F. Chau & Associates LLC
Gebremariam Samuel A
Hu Shouxiang
Samsung Electronics Co,. Ltd.
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