Deposition method for wiring thin film

Details Deposition method for wiring thin film Deposition method for wiring thin film

2006-11-14

2006-11-14

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S629000, C438S643000, C438S660000, C438S663000, C438S688000

Reexamination Certificate

active

07135399

ABSTRACT:
An Al3Ti film having a large amount of dissolved Si is deposited on a semiconductor substrate to form a laminate with an Al wiring film, and heat treatment is performed at a temperature of at least 400° C., to thereby absorb excessive Si into the Al3Ti film and so prevent the occurrence of Si nodules. By depositing Al film at a temperature of at least 400° C. at the time of depositing the Al wiring film on the Al3Ti film, excessive Si is caused to be absorbed in the Al3Ti film. Further, at the time of depositing a Ti film on the semiconductor substrate and depositing the Al wiring film, the Al film is deposited at a temperature of a least 400° C., there is reaction between the Ti film within the laminate, causing an Al3Ti film to be produced, and excessive Si is absorbed in the Al3Ti film produced.

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