Deposition method for a transition-metal-containing dielectric

Details Deposition method for a transition-metal-containing dielectric Deposition method for a transition-metal-containing dielectric

2007-01-19

2010-02-23

Tran, Minh-Loan T (Department: 2826)

Semiconductor device manufacturing: process

Making passive device

C438S239000, C438S250000, C438S393000, C438S387000, C438S396000, C427S255310, C427S255360, C427S255700, C427S255600, C427S255395, C427S419200, C257S068000, C257S071000, C257S298000, C257S532000, C257SE29342, C257SE27048, C257SE21396, C257SE21008, C257SE21647, C257S310000, C257S306000

Reexamination Certificate

active

07666752

ABSTRACT:
The present invention relates to a method for depositing a dielectric material comprising a transition metal compound. After providing a substrate, a first pre-cursor comprising a transition metal compound and a second pre-cursor predominantly comprising at least one of water vapour, ammonia and hydrazine are successively applied on the substrate for forming a first layer of transition metal containing material. In a next step the first pre-cursor and a third pre-cursor comprising at least one of ozone and oxygen are successively applied on the first layer for forming a second layer of the transition metal containing material.

REFERENCES:
patent: 7382014 (2008-06-01), Iijima
patent: 2005/0070063 (2005-03-01), Im et al.
patent: 2005/0255246 (2005-11-01), Kim et al.
patent: 2006/0205143 (2006-09-01), Govindarajan
patent: 2007/0048953 (2007-03-01), Gealy et al.
patent: 102006 00613 (2006-08-01), None
patent: WO 2004/042804 (2004-05-01), None
German Examination Report dated Oct. 31, 2007.

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