Deposition and planarizing methods and apparatus

Details Deposition and planarizing methods and apparatus Deposition and planarizing methods and apparatus

1986-12-04

1988-07-12

Niebling, John F.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

20419215, 20419232, 204298, C23C 1434

Patent

active

047568100

ABSTRACT:
A layer of a substance such as an aluminum alloy is deposited, preferably by sputtering, onto a surface of a substrate such as a semiconductor wafer. The deposited substance is redistributed by bombarding the layer with ions. The ion bombardment may be induced by applying low frequency RF excitation at about 5 KHz -1 MHz to the substrate.

REFERENCES:
patent: 3451912 (1969-06-01), D'heurle et al.
patent: 3528906 (1970-09-01), Cash, Jr. et al.
patent: 3661761 (1972-05-01), Koenig
patent: 3775285 (1973-11-01), Lane
patent: 3804738 (1974-04-01), Lechaton et al.
patent: 3868723 (1975-02-01), Lechaton et al.
patent: 3983022 (1976-09-01), Auyang et al.
patent: 4007103 (1977-02-01), Baker et al.
patent: 4036723 (1977-07-01), Schwartz et al.
patent: 4410407 (1983-10-01), Macaulay
patent: 4468437 (1984-08-01), Patten et al.
patent: 4664935 (1987-05-01), Strahl
Homma et al., "Planar Deposition of Aluminum by RF/DC Sputtering with RF Bias", Journal Electrochemical Society, vol. 132, No. 6, pp. 1466-1472 (1985).
Skelly et al., "Significant Improvements in Step Coverage Using Bias Sputtering Aluminum", Journal of Vacuum Science Technology A, vol. 4, No. 3, pp. 457-460, May/Jun., 1986.
Tsui, R. T. C., "Calculation of Ion Bombarding Energy and Its Distribution in RF Sputtering", Physical Review, vol. 168, No. 1, pp. 107-113, Apr. 5, 1968.
Bader et al., "Planarization by Radio-Frequency Bias Sputtering of Aluminum as Studied Experimentally and by Computer Simulation", J. Vac. Sci. Technol. A 3(6), Nov./Dec. 1985, pp. 2167-2171.
Bader et al. "A New Metallization Technique for Very Large Scale Integrated Structures: Experiments and Computer Simulation", J. Vac. Sci. Technol. B 4(4), Jul./Aug. 1986, pp. 833-836.
Bader et al., "Topographical Limitations to the Metallization of Very Large Scale Integrated Structures by Bias Sputtering: Experiments and Computer Simulations", J. Vac. Sci. Technol. B 4(5), Sep./Oct. 1986, pp. 1192-1194.
Machine Technology Inc. brochure, "Copper Distribution in Aluminum: Silicon: Copper Films Deposited by Various Techniques in the SypherLine.TM. Sputtering System," vol. 1, No. 2, Apr. 1986.
Machine Technology brochure, "Examination by Scanning Auger Microprobe of Copper Distribution in a 1.TM. Planarized Film of Aluminum: Silicon: Copper Deposited by the SypherLine.TM. Sputtering System, vol. 1, No. 3, Apr. 1986.
Machine Technology Inc. brochure, "Planarizing Enhancement Mode `Sputtering . . . plus`.TM. for Planarized Aluminum in Sypherline.TM., vol. 1, No. 1, Apr. 1986.
Machine Technology, Inc. advertisement, "SypherLine.TM. `Sputtering . . . plus`.TM., published in Semiconductor International, Nov. 1985.

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