Deposition and patterning of boron nitride nanotube ILD

Details Deposition and patterning of boron nitride nanotube ILD Deposition and patterning of boron nitride nanotube ILD

2007-10-09

2007-10-09

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S082000, C438S623000, C438S629000, C438S639000, C438S725000, C257SE21292

Reexamination Certificate

active

10945319

ABSTRACT:
A method for forming a dielectric layer is disclosed herein. In accordance with the method, a first material is provided (303) which comprises a suspension of nanoparticles in a liquid medium. A dielectric layer is then formed (305) on the substrate from the suspension through an evaporative process.

REFERENCES:
patent: 5879127 (1999-03-01), Grunes et al.
patent: 6329062 (2001-12-01), Gaynor
patent: 6420092 (2002-07-01), Yang et al.
patent: 6827982 (2004-12-01), Huang et al.
patent: 2003/0180526 (2003-09-01), Winey et al.
patent: 2003/0234465 (2003-12-01), Chen et al.
patent: 2004/0055892 (2004-03-01), Oh et al.
patent: 2004/0108298 (2004-06-01), Gao
patent: 2004/0241896 (2004-12-01), Zhou et al.
Ventzek, Peter et al., “Deposition and Patterning of Boron Nitride Nanotube ILD”; Disclosure May 3, 2004 (Internal Freescale Semiconductor document); 10 pages.

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