Deposition and chamber treatment methods

Details Deposition and chamber treatment methods Deposition and chamber treatment methods

2005-03-15

2005-03-15

Meeks, Timothy (Department: 1762)

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

C427S248100, C427S299000, C427S331000, C427S337000, C427S579000, C427S237000

Reexamination Certificate

active

06866900

ABSTRACT:
The invention encompasses a method for sequentially processing separate sets of wafers within a chamber. Each set is subjected to plasma-enhanced deposition of material within the chamber utilizing a plasma that is primarily inductively coupled. After the plasma-enhanced deposition, and while the set remains within the chamber, the plasma is changed to a primarily capacitively coupled plasma. The cycling of the plasma from primarily inductively coupled to primarily capacitively coupled can increase the ratio of processed wafers to plasma reaction chamber internal sidewall cleanings that can be obtained while maintaining low particle counts on the processed wafers.

REFERENCES:
patent: 6465051 (2002-10-01), Sahin et al.

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