Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-05-21
1999-11-02
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257317, 257320, H01L 29788
Patent
active
059775858
ABSTRACT:
An apparatus and method for depositing a tunneling oxide layer between two conducting layers utilizing a low pressure, low temperature chemical vapor depostion (LPCVD) process is disclosed wherein tetraethylorthosilicate (TEOS) is preferably used. As applied to an electrically erasable programmable read only memory (EEPROM) device having polysilicon layers, the apparatus is constructed by forming a first layer of polysilicon, patterned as desired. A layer of silicon dioxide is then deposited by decomposition of TEOS to form the tunneling oxide to a predetermined thickness. If enhanced emission structures are desired, a layer of relatively thin tunneling oxide may be grown on the first layer of polysilicon. The oxide layer is then annealed and densified, preferably using steam and an inert gas at a specific temperature. A second layer of polysilicon is then formed on top of the tunneling oxide.
REFERENCES:
patent: 4526631 (1985-07-01), Silvestri et al.
patent: 4599706 (1986-07-01), Guterman
patent: 4720323 (1988-01-01), Sato
patent: 4763177 (1988-08-01), Paterson
patent: 4763299 (1988-08-01), Hazani
patent: 4851370 (1989-07-01), Doklan et al.
Korma, E.J. et al. "SiO.sub.2 Layers on Polycrystalline Silicon," in Insulating Films on Semiconductors, J.F Verweij and D.R. Wolters, eds., Elsevier Science Publishing Co., Inc, N.Y., N.Y. pp. 278-281.
Peek, H.L., "The Characterization and Technology of Deposited Oxides for EEROM", in Insulating Films on Semiconductors, J.F. and D.R. Wolters, eds., Elsevier Science Publishers B.V., 1983, pp. 261-265.
Guay John
Xicor Inc.
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