Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Substrate dicing
Reexamination Certificate
2001-04-17
2008-09-23
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Substrate dicing
C438S050000, C438S049000, C438S459000, C257SE21613
Reexamination Certificate
active
07427526
ABSTRACT:
This invention uses large surface to volume ratio materials for separation, release layer, and sacrificial material applications. The invention outlines the material concept, application designs, and fabrication methodologies. The invention is demonstrated using deposited column/void network materials as examples of large surface to volume ratio materials. In a number of the specific applications discussed, it is shown that it is advantageous to create structures on a laminate on a mother substrate and then, using the separation layer material approach, to separate this laminate from the mother substrate using the present separation scheme. It is also shown that the present materials have excellent release layer utility. In a number of applications it is also shown how the approach can be used to uniquely form cavities, channels, air-gaps, and related structures in or on various substrates. Further, it is demonstrated that it also can be possible and advantageous to combine the schemes for cavity formation with the scheme for laminate separation.
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Edited by—H. Baltes, W. Göpel, J. Hesse, Senso
Bae Sanghoon
Chang Kyu-hwan
Fonash Stephen J.
Hayes Daniel J.
Kalkan A. Kaan
Booth Richard A.
Nixon & Peabody LLP
The Penn State Research Foundation
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