Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-09
2007-01-09
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S391000, C257S205000
Reexamination Certificate
active
10692255
ABSTRACT:
A semiconductor circuit with a depletion-mode transistor is formed with a method that eliminates the need for a separate mask and implant step to set the threshold voltage of the depletion-mode transistor. As a result, the method of the present invention reduces the cost and complexity associated with the fabrication of a semiconductor circuit that includes a depletion-mode transistor.
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Richard S. Muller and Theodore I. Kamins, “Device Electronics for Integrated Circuits”, Second Edition, pps. 477-479.
Lee Eugene
National Semiconductor Corporation
Pickering Mark C.
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