Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-11
2011-01-11
Phung, Anh (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S348000, C257SE27103, C257S501000
Reexamination Certificate
active
07868372
ABSTRACT:
A method for forming a depletion-mode single-poly electrically erasable programmable read-only memory (EEPROM) cell is provided. The method includes providing a substrate having a floating region and a control region. Then, an isolation deep well and a deep well are formed in the floating region and the control region of the substrate respectively. A well region is formed in the isolation deep well simultaneously with forming an isolation well region between the isolation deep well and the deep well in the substrate. A depletion doped region and a cell implant region are formed at the well region of the substrate and the deep well of the substrate respectively. A floating gate structure is formed across over the floating region and the control region. An implantation process is performed to form a source/drain region and a heavily doped region in the depletion doped region and the cell implant region respectively.
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Henry Schauer et al., “A High-Density, High-Performance EEPROM Cell” IEEE Transactions on Electron Devices, vol. ED-29, No. 8, Aug. 1982, pp. 1178-1185.
Richard D. Jolly et al., “A 35-ns. 64K EEPROM” IEEE Journal of Solid-State Circuits, vol. sc-20, No. 5, Oct. 1985, pp. 971-978.
Chen Jung-Ching
Tung Ming-Tsung
Bernstein Allison P
King Justin
Phung Anh
United Microelectronics Corp.
WPAT, P.C.
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