Depletion mode power MOSFET with refractory gate and method of m

Details Depletion mode power MOSFET with refractory gate and method of m Depletion mode power MOSFET with refractory gate and method of m

1995-11-30

1998-07-28

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257335, 257337, 257402, H01L 2976, H01L 2994, H01L 2701, H01L 2712

Patent

active

057866198

ABSTRACT:
A depletion mode power MOSFET has a gate electrode formed of material that is refractory, or resistant, to high temperature encountered during device fabrication. A depletion channel region which is formed in a base region of a MOSFET and which interconnects the source and drain regions is formed after a high temperature drive to form the base region, but before a gate oxide and gate and source electrodes are formed at lower temperatures. The depletion channel region is thus subjected to reduced temperatures and grows only slightly in thickness, so that it can be easily depleted. The gate oxide, similarly, is subjected to reduced temperatures, and, particularly when made thin, exhibits high insensitivity to radiation exposure.

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