Depletion controlled isolation stage

Details Depletion controlled isolation stage Depletion controlled isolation stage

1998-10-29

1999-11-02

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257356, 361100, H01L 2362

Patent

active

059775963

ABSTRACT:
An input protection device is presented having a depletion controlled isolation stage. In one embodiment of the invention, a depletion controlled isolation resistor is formed between adjacent N+ diffused regions by N-well diffusion. One N+ diffused region electrically contacts an input bond pad and a primary protective device. The other N+ diffused region electrically contacts a second protective device and the internal circuit it is to protect. The depletion controlled isolation resistor limits the amount of current passing through the resistor to a safe level during an over-voltage condition. In another embodiment of the invention, a depletion controlled isolation stage includes a silicon controlled rectifier (SCR) as the primary protective device in combination with the depletion controlled isolation resistor.

REFERENCES:
patent: 4710791 (1987-12-01), Shirato et al.
patent: 4821096 (1989-04-01), Maloney
patent: 4939616 (1990-07-01), Rountree
patent: 5010380 (1991-04-01), Avery
patent: 5012317 (1991-04-01), Rountree
patent: 5019888 (1991-05-01), Scott et al.
patent: 5270565 (1993-12-01), Lee et al.
patent: 5594265 (1997-01-01), Shimizu et al.
"A COMS VSLI ESD Input Protection Device, DIFIDW", Electrical Overstress/Electrostatic Discharge Symposium Proceedings, Digital Equipment Corp., Hudson, Mass., 1984, pp. 202-209.
"Doping of N+ and P+ Polysilicon in a Dual-Gate CMOS Process", Wong, et al., IEEE, 1988, pp. 238-241.
"Effect of Silicon-Gate Resistance on the Frequency Response of MOS Transistors", Lin, et al., IEEE Transactions on Electron Devices, May 1975, pp. 255-264.
"Ion-Implanted Semiconductor Devices", Lee, et al., Proceedings of the IEEE, No. 9, Sep. 1974, pp. 1241-1255.

Affiliated with

Also associated with

Rating

Depletion controlled isolation stage does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Depletion controlled isolation stage, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Depletion controlled isolation stage will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2138954