Depletion compensated polysilicon electrodes

Details Depletion compensated polysilicon electrodes Depletion compensated polysilicon electrodes

1997-08-21

1999-06-29

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257306, 257310, H01L 27108

Patent

active

059172134

ABSTRACT:
A capacitor in a semiconductor integrated circuit is fabricated having a fixed charge density introduced near an electrode/dielectric interface. The fixed charge density compensates for the effects of a depletion layer, which would otherwise lower the effective capacitance. By shifting the undesirable effect of the depletion capacitance outside of the operating voltage range, the capacitor is effectively converted to an accumulation mode. The fixed charge density is preferably introduced by a plasma nitridation process performed prior to formation of the capacitor dielectric.

REFERENCES:
patent: Re35420 (1997-01-01), Cathey et al.
patent: 4996081 (1991-02-01), Ellul et al.
patent: 5032545 (1991-07-01), Doan et al.
patent: 5032892 (1991-07-01), Chern et al.
patent: 5037773 (1991-08-01), Lee et al.
patent: 5043780 (1991-08-01), Fazan et al.
patent: 5053351 (1991-10-01), Fazan et al.
patent: 5082797 (1992-01-01), Chan et al.
patent: 5089986 (1992-02-01), Sandhu et al.
patent: 5100826 (1992-03-01), Dennison
patent: 5108943 (1992-04-01), Sandhu et al.
patent: 5130885 (1992-07-01), Fazan et al.
patent: 5138411 (1992-08-01), Sandhu
patent: 5182232 (1993-01-01), Chhabra et al.
patent: 5202278 (1993-04-01), Mathews et al.
patent: 5208176 (1993-05-01), Ahmad et al.
patent: 5262343 (1993-11-01), Rhodes et al.
patent: 5278091 (1994-01-01), Fazan et al.
patent: 5318920 (1994-06-01), Hayashide
patent: 5340763 (1994-08-01), Dennison
patent: 5340765 (1994-08-01), Dennison et al.
patent: 5349494 (1994-09-01), Ando
patent: 5362666 (1994-11-01), Dennison
patent: 5429972 (1995-07-01), Anjum et al.
patent: 5608247 (1997-03-01), Brown
patent: 5760434 (1968-06-01), Zahurak et al.
Ino, et al., "Silicon Nitride Thin-Film . . . " IEEE Transaction on Electron Devices, vol. 41, No. 5, May 1994; pp. 703-707.
"Impact of Surface Proximity Gettering and Nitride Oxide Side-Wall Spacer by Nitrogen Implantation on Sub-Quarter Micron CMOS LDD FETs", Shimizu, et al., incomplete citation IEDM-95 pp. 859-862.

Affiliated with

Also associated with

Rating

Depletion compensated polysilicon electrodes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Depletion compensated polysilicon electrodes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Depletion compensated polysilicon electrodes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1377733