Depletable cathode low charge storage diode

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S327000, C257S342000, C438S214000, C438S280000, C438S521000

Reexamination Certificate

active

07973360

ABSTRACT:
An integrated circuit device comprising a diode and a method of making an integrated circuit device comprising a diode are provided. The diode can comprise an island of a first conductivity type, a first region of a second conductivity type formed in the island, and a cathode diffusion contact region doped to the second conductivity type disposed in the first region. The diode can also comprise a cathode contact electrically contacting the cathode diffusion contact region, an anode disposed in the island, an anode contact electrically contacting the anode, and a first extension region doped to the first conductivity type disposed at a surface junction between the first region and the island.

REFERENCES:
patent: 4823173 (1989-04-01), Beasom
patent: 5264719 (1993-11-01), Beasom
patent: 6046474 (2000-04-01), Oh et al.
patent: 6552392 (2003-04-01), Beasom
patent: 6897103 (2005-05-01), Beasom
patent: 7161223 (2007-01-01), Beasom
patent: 7385246 (2008-06-01), Beasom
patent: 7759728 (2010-07-01), Beasom
patent: 2005/0230747 (2005-10-01), Suzuki et al.
patent: 2005/0230761 (2005-10-01), Imahashi et al.
patent: 2006/0118860 (2006-06-01), Hatade

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