Denuding a semiconductor substrate

Details Denuding a semiconductor substrate Denuding a semiconductor substrate

1994-01-24

1994-10-04

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG60, H01L 21306

Patent

active

053526155

ABSTRACT:
A semiconductor substrate is denuded using a reducing gas mixture including carbon monoxide and carbon dioxide. Use of the reducing gas mixture allows very low oxygen partial pressure to be achieved in a furnace tube during the step of denuding. Oxygen partial pressure lower than 1E-9 atmosphere may be achieved by adjusting the relative ratio of carbon monoxide and carbon dioxide. Precipitates are grown after forming nucleating sites. Both CZ and FZ substrates may use the process, and the process can be used with silicon, germanium, or other semiconductor materials.

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Matsushita, et al.; "Improvement of Silicon Surface Quality by H2 Anneal;" 18th Conference on Solid State Devices and Materials; pp. 529-532 (1986).
Kirino, et al.; "H2-Annealed CZ Wafer Brought to the Practical Level . . . ;" Nikkei Microdevices; pp. 46-53 (Jun. 1993).
Kubota, et al.; "Oxygen Precipitation Enhancement in Polysilicon Deposited CZ-Si by Metal Contamination;" Extended Abstracts-Electrochem. Soc.; pp. 279-280 (Oct. 10-15, 1993).
Sawata, et al.; "Hydrogen Annealing of Silicon Wafer;" Extended Abstracts-Electrochem. Soc.; pp. 426-427 (Oct. 10-15, 1993).

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