Densification in an intermetal dielectric film

Details Densification in an intermetal dielectric film Densification in an intermetal dielectric film

1994-06-10

1997-03-11

Kunemund, Robert

Fishing, trapping, and vermin destroying

437247, 437238, H01L 21316

Patent

active

056101058

ABSTRACT:
An improved anneal process is disclosed for use in the preparation of a dielectric layer, especially an intermetal dielectric layer. An oxide layer is deposited using a H.sub.2 O-TEOS PECVD process. A vacuum bake is used to minimize or eliminate volatile water, hydrogen, and hydrocarbon impurities in the dielectric layer. An oxidation anneal is then performed to scavenge any remaining undesirable species, and to provide for densification of the dielectric layer.

REFERENCES:
patent: 5139971 (1992-08-01), Giridhar et al.
patent: 5314724 (1994-05-01), Tsukune et al.
"H.sub.2 O-TEOS Plasma-CVD Realizing Dielectrics Having a Smooth Surface." Hatanaka et al., IEEE VMIC Conference, pp. 435-441 (1991).
"Properties of Chemical Vapor Deposited TEOS Oxides . . . Hydrogen Concentration", Nguyen, Ann Marie, J. Vac. Sci. Technol. B8(3) May/Jun. 1990 p. 533.
Wolf, Stanley "Silicon Processing for the VLSI Era", vol. 1, pp. 57-58 (1986).

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