Dense vertical programmable read only memory cell structures and

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257317, H01L 29788

Patent

active

058474250

ABSTRACT:
A memory array of PROM, EPROM or EEPROM cells has each cell formed in a trench of a thick oxide layer deposited on a silicon substrate, in a manner that a significant portion of opposing areas of the floating gate and control gate of each cell which provide capacitive coupling between them are formed vertically. This allows the density of the array to be increased since the amount of semiconductor substrate area occupied by each cell is decreased without having to sacrifice the amount or quality of the capacitive coupling. Further, a technique of forming capacitive coupling between the floating gate and an erase gate in a flash EEPROM array cell with improved endurance is disclosed.

REFERENCES:
patent: 4314265 (1982-02-01), Simko
patent: 4331968 (1982-05-01), Goesney, Jr. et al.
patent: 4486769 (1984-12-01), Simko
patent: 4531203 (1985-07-01), Masuoka et al.
patent: 4590504 (1986-05-01), Guterman
patent: 4713677 (1987-12-01), Tigelaar et al.
patent: 4796228 (1989-01-01), Baglee
patent: 4803529 (1989-02-01), Masuoka
patent: 4814840 (1989-03-01), Kameda
patent: 4835741 (1989-05-01), Baglee
patent: 4849369 (1989-07-01), Jeuch et al.
patent: 4853895 (1989-08-01), Mitchell et al.
patent: 4933739 (1990-06-01), Harari
patent: 4958318 (1990-09-01), Harari
patent: 4990979 (1991-02-01), Otto
patent: 4996572 (1991-02-01), Tanaka et al.
patent: 5041886 (1991-08-01), Lee
patent: 5049956 (1991-09-01), Yoshida
patent: 5053839 (1991-10-01), Esquivel et al.
patent: 5070032 (1991-12-01), Yuan et al.
patent: 5071782 (1991-12-01), Mori
patent: 5078498 (1992-01-01), Kadakia et al.
patent: 5095344 (1992-03-01), Harari
patent: 5111270 (1992-05-01), Tzeng
patent: 5153684 (1992-10-01), Shoji et al.
patent: 5364805 (1994-11-01), Taura et al.
Berenga et al. "E.sup.2 -PROM TV Synthesizer," 1978 IEEE International Solid-State Circuits Conference: ISSCC 78, Feb. 17, 1978, pp. 196-197.
Wang et al., "Direct Moat Isolation for VLSI," iedm 81, 1981, pp. 372-375.
Lee and Hu, "Polarity Asymmetry of Oxides Grown on Polycrystalline Silicon," IEEE Transactions on Electron Devices, 35:7, Jul. 1988, pp. 1063-1070.
Wakamiya et al., "Fully Planarized 0.5.mu.m Technologies for 16M Dram," IEDM 88,1988, pp. 246-249.
Inoue et al., "A 16Mb DRAM with An Open Bit-Line Architecture," ISSCC 88, Feb. 19, 1988, pp. 246-247 and 388.
McCormick, "Flash-EPROMs and DRAMs--Ein Vergleich," Elektronik, vol. 2, Jan. 20, 1989, pp. 95-96 (Abstract in English).
Hisamune et al., "A 3.6 .mu.m.sup.2 Memory Cell Structure for 16 MB EPROMs," IEDM 89, 1989, pp. 583-586.
Bellezza et al., "A New Self-Aligned Field Oxide Cell for Multimegabit EPROMs," IEDM 89, 1989, pp. 579-582.
Electronics, May 12, 1986, pp. 30-32.

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