Dense SRAM cells with selective SOI

Details Dense SRAM cells with selective SOI Dense SRAM cells with selective SOI

2005-04-05

2005-04-05

Ngô, Ngân V. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S369000, C257S903000

Reexamination Certificate

active

06876040

ABSTRACT:
A SRAM cell fabricated in SSOI (selective silicon on insulator) comprises cross coupled PFET pull-up devices P1, P2and NFET pull-down devices N1, N2, with the P1, P2devices being connected to the power supply and the N1, N2devices being connected to the ground. A first passgate NL is coupled between a first bitline and the junction of the devices P1and N1, with its gate coupled to a wordline, and a second passgate NR is coupled between a second bitline and the junction of devices P2and N2, with its gate coupled to the wordline. Each of the pull-up devices P1, P2, the pull-down devices N1, N2, and the first and second passgates NL, NR are fabricated with selective SOI, with buried oxide being selectively provided under the drains of the pull-up devices P1and P2, the drains of the pull-down devices N1and N2, and the sources and drains of the passgate devices NL and NR.

REFERENCES:
patent: 5159416 (1992-10-01), Kudoh
patent: 5198683 (1993-03-01), Sivan
patent: 5489790 (1996-02-01), Lage
patent: 5497022 (1996-03-01), Sakamoto
patent: 5635731 (1997-06-01), Ashida
patent: 5734179 (1998-03-01), Chang et al.
patent: 6204518 (2001-03-01), Adan et al.
patent: 6214653 (2001-04-01), Chen et al.
patent: 6271542 (2001-08-01), Emma et al.
patent: 6333532 (2001-12-01), Davari et al.

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