Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-05
2005-04-05
Ngô, Ngân V. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S369000, C257S903000
Reexamination Certificate
active
06876040
ABSTRACT:
A SRAM cell fabricated in SSOI (selective silicon on insulator) comprises cross coupled PFET pull-up devices P1, P2and NFET pull-down devices N1, N2, with the P1, P2devices being connected to the power supply and the N1, N2devices being connected to the ground. A first passgate NL is coupled between a first bitline and the junction of the devices P1and N1, with its gate coupled to a wordline, and a second passgate NR is coupled between a second bitline and the junction of devices P2and N2, with its gate coupled to the wordline. Each of the pull-up devices P1, P2, the pull-down devices N1, N2, and the first and second passgates NL, NR are fabricated with selective SOI, with buried oxide being selectively provided under the drains of the pull-up devices P1and P2, the drains of the pull-down devices N1and N2, and the sources and drains of the passgate devices NL and NR.
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Steegen An
Wann Hsingjen
Wong Robert C.
Zhang Ying
Ngo Ngan V.
Scully Scott Murphy & Presser
Trepp, Esq. Robert M.
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