Dense pitch bulk FinFET process by selective EPI and etch

Details Dense pitch bulk FinFET process by selective EPI and etch Dense pitch bulk FinFET process by selective EPI and etch

2011-06-14

2011-06-14

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S903000, C257SE21661, C257SE21703, C257SE27100, C257SE27112

Reexamination Certificate

active

07960791

ABSTRACT:
Disclosed is a method of forming a pair of transistors by epitaxially growing a pair of silicon fins on a silicon germanium fin on a bulk wafer. In one embodiment a gate conductor between the fins is isolated from a conductor layer on the bulk wafer so a front gate may be formed. In another embodiment a gate conductor between the fins contacts a conductor layer on the bulk wafer so a back gate may be formed. In yet another embodiment both of the previous structures are simultaneously formed on the same bulk wafer. The method allow the pairs of transistors to be formed with a variety of features (e.g., strained fins, a space between two fins that is approximately 0.5 to 3 times greater than a width of a single fin, a first dielectric layer on the inner sidewalls of each pair of fins with a different thickness and/or a different dielectric material than a second dielectric layer on the outer sidewalls of each pair of fins, etc.).

REFERENCES:
patent: 5604368 (1997-02-01), Taur et al.
patent: 6413802 (2002-07-01), Hu et al.
patent: 6888199 (2005-05-01), Nowak et al.
patent: 7355253 (2008-04-01), Cohen
patent: 2003/0201458 (2003-10-01), Clark et al.
patent: 2004/0099903 (2004-05-01), Yeo et al.
patent: 2004/0110097 (2004-06-01), Ahmed et al.
patent: 2004/0169239 (2004-09-01), Rim
patent: 2005/0040444 (2005-02-01), Cohen
patent: 2005/0202604 (2005-09-01), Cheng et al.

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