Dense OPC

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C716S030000, C716S030000

Reexamination Certificate

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07434199

ABSTRACT:
A method of calculating process conditions for performing optical and process correction (OPC) or other resolution enhancement techniques on a layout design. Process conditions are estimated on a layout database on a substantially uniform grid. Contour curves are created from the estimated process conditions. The contour curves are then compared against the features in the layout to determine edge placement errors. From the edge placement errors, OPC or other corrections for the features can be made.

REFERENCES:
patent: 4532650 (1985-07-01), Wihl et al.
patent: 4762396 (1988-08-01), Dumant et al.
patent: 5502654 (1996-03-01), Sawahata
patent: 5655110 (1997-08-01), Krivokapic et al.
patent: 5699447 (1997-12-01), Alumot et al.
patent: 5723233 (1998-03-01), Garza et al.
patent: 5825647 (1998-10-01), Tsudaka
patent: 5879844 (1999-03-01), Yamamoto et al.
patent: 5991006 (1999-11-01), Tsudaka
patent: 6016357 (2000-01-01), Neary et al.
patent: 6049660 (2000-04-01), Ahn et al.
patent: 6077310 (2000-06-01), Yamamoto et al.
patent: 6120952 (2000-09-01), Pierrat et al.
patent: 6128067 (2000-10-01), Hashimoto
patent: 6187483 (2001-02-01), Capodieci et al.
patent: 6243855 (2001-06-01), Kobayashi et al.
patent: 6249904 (2001-06-01), Cobb
patent: 6263299 (2001-07-01), Aleshin et al.
patent: 6269472 (2001-07-01), Garza et al.
patent: 6301697 (2001-10-01), Cobb
patent: 6317859 (2001-11-01), Papadopoulou
patent: 6370679 (2002-04-01), Chang et al.
patent: 6425117 (2002-07-01), Pasch et al.
patent: 6453452 (2002-09-01), Chang et al.
patent: 6453457 (2002-09-01), Pierrat et al.
patent: 6467076 (2002-10-01), Cobb
patent: 6499003 (2002-12-01), Jones et al.
patent: 6643616 (2003-11-01), Granik et al.
patent: 6665845 (2003-12-01), Aingaran et al.
patent: 6792159 (2004-09-01), Aufrichtig et al.
patent: 6792590 (2004-09-01), Pierrat et al.
patent: 2002/0199157 (2002-12-01), Cobb
patent: 2003/0170551 (2003-09-01), Futatsuya
patent: 2004/0005089 (2004-01-01), Robles et al.
patent: 2004/0088149 (2004-05-01), Cobb
patent: 09319067 (1997-12-01), None
patent: WO 01/65315 (2001-09-01), None
Cobb, N., and Y. Granik, “Model-Based OPC Using the MEEF Matrix,”Proceedings of SPIE, vol. 4889: 22nd Annual BACUS Symposium on Photomask Technology, Monterey, Calif., Sep. 30-Oct. 4, 2002, p. 147.
Cobb, N., and A. Zakhor, “Experimental Results on Optical Proximity Correction With Variable Threshold Resist Model,”Proceedings of SPIE, vol. 3051: Symposium on Optical Microlithography X, Santa Clara, Calif., Mar. 10-14, 1997, pp. 458-468.
Cobb, N., and A. Zakhor, “Fast, Low-Complexity Mask Design,”Proceedings of SPIE, vol. 2440: Symposium on Optical/Laser Microlithography VIII, Santa Clara, Calif., Feb. 22-24, 1995, pp. 313-327.
Cobb, N., and A. Zakhor, “Fast Sparse Aerial Image Calculation for OPC,”Proceedings of SPIE, vol. 2621: 15th Annual BACUS Symposium on Photomask Technology and Management, Santa Clara, Calif., Sep. 20-22, 1995, pp. 534-545.
Cobb, N., and A. Zakhor, “Large Area Phase-Shift Mask Design,”Proceedings of SPIE, vol. 2197: Symposium on Optical/Laser Microlithography VII, San Jose, Calif., Mar. 2-4, 1994, pp. 348-360.
Cobb., N., et al., “Mathematical and CAD Framework for Proximity Correction,”Proceedings of SPIE, vol. 2726: Symposium on Optical Microlithography IX, Santa Clara, Calif., Mar. 13-15, 1996, pp. 208-222.
Cobb, N., and Y. Granik, “Using OPC to Optimize for Image Slope and Improve Process Window,” (Nov. 20, 2002),Proceedings of SPIE, vol. 5130: Photomask Japan, Japan, Apr. 16-18, 2003, p. 42.
Granik, Y., “Generalized MEEF Theory,”Interface 2001, Nov. 2001.
Granik, Y., and N. Cobb, “MEEF as a Matrix,”Proceedings of SPIE, vol. 4562: 21st Annual BACUS Symposium on Photomask Technology, Monterey, Calif., Oct. 2-5, 2001, pp. 980-991.
Granik, Y., and N. Cobb, “Two-Dimensional G-MEEF Theory and Applications,”Proceedings of SPIE, vol. 4754: Symposium on Photomask and Next-Generation Lithography Mask Technology IX, Yokohama, Japan, Apr. 23-25, 2002, pp. 146-155.
Maurer, W., et al., “Process Proximity Correction Using an Automated Software Tool,”Proceedings of SPIE, vol. 3334: Optical Microlithography XI, Santa Clara, Calif., Feb. 22-27, 1998, pp. 245-253.
Maurer, W., et al., “Evaluation of a Fast and Flexible OPC Package: OPTISSIMO,”Proceedings of SPIE, vol. 2884: 16th Annual Symposium on Photomask Technology and Management, Redwood City, Calif., Sep. 18-20, 1996, pp. 412-418.
Ohnuma, H., et al., “Lithography Computer Aided Design Technology for Embedded Memory in Logic,”Japanese Journal of Applied Physics 37(12B):6686-6688, Dec. 1998.
N. Cobb, “Flexible sparse and dense OPC algorithms,”Proceedings of SPIE, vol. 5853, Photomask and Next-Generation Lithography Mask Technology XII, Bellingham, Washington, 2005, pp. 693-702.
Toh, K.K.H, and A.R. Neureuther, “Identifying and Monitoring Effects of Lens Aberrations in Projection Printing,” Selected Papers on Resolution Enhancement Techniques in Lithography, SPIE Milestone Series 178:165-172, 2004; reprinted from Optical Microlithography V1, Proc. SPIE 772:202-209, Jan. 1987.

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