Dense chevron finFET and method of manufacturing same

Details Dense chevron finFET and method of manufacturing same Dense chevron finFET and method of manufacturing same

2008-01-29

2008-01-29

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S176000, C438S283000

Reexamination Certificate

active

07323374

ABSTRACT:
A method, structure and alignment procedure, for forming a finFET. The method including, defining a first fin of the finFET with a first mask and defining a second fin of the finFET with a second mask. The structure including integral first and second fins of single-crystal semiconductor material and longitudinal axes of the first and second fins aligned in the same crystal direction but offset from each other. The alignment procedure including simultaneously aligning alignment marks on a gate mask to alignment targets formed separately by a first masked used to define the first fin and a second mask used to define the second fin.

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