Delta doped and counter doped dynamic threshold voltage MOSFET f

Details Delta doped and counter doped dynamic threshold voltage MOSFET f Delta doped and counter doped dynamic threshold voltage MOSFET f

1995-09-27

1998-07-14

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257338, 257350, H01L 2976, H01L 2994, H01L 2701

Patent

active

057808996

ABSTRACT:
A dynamic threshold voltage IGFET such as a MOSFET is operable at voltages of 0.6 volt or less. The threshold voltage of the transistor is reduced to zero volt or less by interconnecting the gate contact and the device body in which the voltage controlled channel is located. The channel region is delta-doped or counter-doped which permits superior performance for high-end VSLI applications. A selective epitaxy on a counter-doped substrate can be used in a counter-doped device. Doped wells can be used in a bulk silicon substrate in forming the devices. Trenching can be used to isolate devices in the doped wells.

REFERENCES:
patent: 5212104 (1993-05-01), Klose
patent: 5272432 (1993-12-01), Nguyen et al.
patent: 5329138 (1994-07-01), Mitani et al.
patent: 5488237 (1996-01-01), Kuwata
Santoni, "Sub-Volt ICs Raise Technology Issues"; Electronic News, vol. 41, No. 2066, May 22, 1995.
Colinge, Jean-Pierre, An SOI Voltage-Controlled Bipolar-MOS Device, IEEE Transactions on Electron Devices, vol. ED-34, No. 4, Apr. 1987, pp. 845-849.
Verdonckt-Vandebroek, Sophie, et al., High-Gain Lateral Bipolar Action in a MOSFET Structure, IEEE Trans. on Electron Devices, vol. 38, No. 11, Nov. 1991, pp. 2487-2495.
Parke, Stephen, et al., Bipolar-FET Hybrid-Mode Operation of Quarter-Micrometer SOI MOSFETS, IEEE Electron Device Letters, vol. 14, No. 5, May 1993, pp. 234-236.
Assaderahi, Fariborz, et al., A Novel Silicon-On-Insulator (SOI MOSFET for Ultra Low Voltage Operation, 1994 IEEE Symposium on Low Power Electronics, Oct. 10-12, San Diego, CA, pp. 58-59.

Affiliated with

Also associated with

Rating

Delta doped and counter doped dynamic threshold voltage MOSFET f does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Delta doped and counter doped dynamic threshold voltage MOSFET f, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Delta doped and counter doped dynamic threshold voltage MOSFET f will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1884751