Delineation of wafers

Radiant energy – Inspection of solids or liquids by charged particles – Methods

Reexamination Certificate

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C438S692000, C438S708000, C451S041000

Reexamination Certificate

active

07355173

ABSTRACT:
A method of junction delineation of non-epitaxial wafers comprises the steps of preparing a sample of the wafer, staining the sample using a mixture of between one and three parts hydrofluoric acid to fifty parts nitric acid to twenty parts water, and scanning the sample with a scanning electron microscope.

REFERENCES:
patent: 5851925 (1998-12-01), Beh et al.
patent: 2003/0171075 (2003-09-01), Nihonmatsu et al.

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