Delay-locked loop circuit controlled by column strobe write...

Details Delay-locked loop circuit controlled by column strobe write... Delay-locked loop circuit controlled by column strobe write...

2009-12-22

2011-11-01

Donovan, Lincoln (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Synchronizing

C327S149000

Reexamination Certificate

active

08049545

ABSTRACT:
The DLL circuit includes a control circuit which controls bias currents of the unit delay circuits according to an externally input column address strobe writing latency (CWL) signal, and/or a DCC control circuit which adjusts steps of a DCC current of the DCC according to the externally input column address strobe writing latency (CWL) signal. The CWL signal may be input by a semiconductor memory device and may be indicative of a column address strobe writing latency of the semiconductor memory device. The semiconductor memory device may be a double data rate (DDR) synchronous DRAM (SDRAM) device.

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