Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-04-19
2011-04-19
Wojciechowicz, Edward (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S401000, C257S452000, C257S461000, C250S208100
Reexamination Certificate
active
07928527
ABSTRACT:
A plurality of image sensor structures and a plurality of methods for fabricating the plurality of image sensor structures provide for inhibited cracking and delamination of a lens capping layer with respect to a planarizing layer within the plurality of image sensor structures. Particular image sensor structures and related methods include at least one dummy lens layer of different dimensions than active lens layer located over a circuitry portion of a substrate within the particular image sensor structures. Additional particular image sensor structures include at least one of an aperture within the planarizing layer and a sloped endwall of the planarizing layer located over a circuitry portion within the particular image sensor structures.
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“Enhancement of Wafer Test/Package Yields by Oxide-Capping of Microlens in CMOS Image Sensor”, H.S. Oh, et al., System IC R&D Division, Hyundai Electronics Industries, The Second IEEE Asia Pacific Conference on ASICs/ Aug. 28-30, 2000, pp. 259-262 (2000).
Gambino Jeffrey P.
Jaffe Mark D.
Leidy Robert K.
Musante Charles F.
Rassel Richard J.
Canale Anthony J.
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
Wojciechowicz Edward
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