Degradation-free low-permittivity dielectrics patterning process

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430315, 430317, 216 41, G03F 700

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active

061500739

ABSTRACT:
A degradation-free, low-permittivity dielectrics patterning process for damascene starts with provision of a substrate, wherein the substrate has a dielectric layer and a via plug formed on it. Then, a inter-metal dielectric layer and an insulating layer are formed in sequence on the dielectric layer. A hard mask layer is next formed on the insulating layer, and is subsequently patterned. An etching process is performed on the insulating layer and the inter metal dielectric layer by using the patterned hard mask layer as a mask to form a metal line trench and expose the via plug. The metal line trench is then filled with metal by forming a metal layer on the hard mask layer. A metal line in the shallow trench is formed by performing chemical mechanical polishing on the metal layer to expose the insulating layer, and then performing post-chemical mechanical polishing cleaning.

REFERENCES:
patent: 5565384 (1996-10-01), Havemann
patent: 5759906 (1998-06-01), Lou
patent: 5930639 (1999-07-01), Schuele

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