Degradation correction for finFET circuits

Details Degradation correction for finFET circuits Degradation correction for finFET circuits

2009-08-10

2011-11-01

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

C257SE29264

Reexamination Certificate

active

08049214

ABSTRACT:
A pair of split-gate fin field effect transistors (finFETs) in an IC, each containing a signal gate and a control gate, in which an adjustable voltage source, preferably in the form of a digital-to-analog-converter (DAC), is connected to the control gate of one of the finFETs, is disclosed. Threshold measurement circuits on the signal gates enable a threshold adjustment voltage from the adjustable voltage source to reduce the threshold mismatch between the finFETs. Adding a second DAC to the second finFET allows a simpler DAC design. Threshold correction may be performed during the operational life of the IC. Implementations in a differential input stage of an amplifier and in a current mirror circuit are described.

REFERENCES:
patent: 2008/0099795 (2008-05-01), Bernstein et al.

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