Degassing method and apparatus

Coating apparatus – Gas or vapor deposition

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C23C 1600

Patent

active

061136980

ABSTRACT:
An apparatus and method for clamping and heating a wafer without using moving parts and without exposing the wafer to external stress is provided. A high backside wafer pressure which provides efficient heat transfer from a heated substrate support to the wafer is offset by a high frontside wafer pressure higher than or lower than the backside wafer pressure. The high frontside pressure reduces wafer stress by providing a uniform frontside/backside pressure and presses the wafer against the heated substrate support. A continuous gas purge for providing a viscous flow across the wafer to carry away desorbed contaminants, and frontside heating elements for improving desorption are provided.

REFERENCES:
patent: 4816638 (1989-03-01), Ukai et al.
patent: 4854263 (1989-08-01), Chang et al.
patent: 5314542 (1994-05-01), Saito et al.
patent: 5374594 (1994-12-01), van de Ven et al.
patent: 5377425 (1995-01-01), Kawakami et al.
patent: 5478429 (1995-12-01), Komino et al.
patent: 5665167 (1997-09-01), Deguchi et al.
patent: 5673750 (1997-10-01), Tsubone et al.
A. Fujie, "Study on Practical Service of Acoustic Levitation and Transportation System of Silicon Wafer," pp. 214-224.
M. Yagai et al., "Ultra Clean N2 Gas Environment Wafer Transport System--Large Size Wafer--," pp. 225-233.
D.R. Wright et al., "Low temperature etch chuck: Modeling and experimental results of heat transfer and wafer temperature," J. Vac. Sci. Technol. A. 10(4), Jul./Aug. 1992, pp. 1065-1070.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Degassing method and apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Degassing method and apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Degassing method and apparatus will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2208039

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.