Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-10-05
2009-11-03
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S761000, C438S778000, C438S782000, C257S635000, C257S766000, C204S157450, C204S157500, C204S633000
Reexamination Certificate
active
07611987
ABSTRACT:
Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.
REFERENCES:
patent: 3635758 (1972-01-01), Schneble, Jr. et al.
patent: 3745039 (1973-07-01), Feldstein
patent: 3784457 (1974-01-01), Mizutani et al.
patent: 3915717 (1975-10-01), Feldstein et al.
patent: 4097440 (1978-06-01), Maximovich et al.
patent: 4350822 (1982-09-01), Albright et al.
patent: 4435490 (1984-03-01), Lelental et al.
patent: 4440805 (1984-04-01), Feldstein
patent: 5190852 (1993-03-01), Matsuda et al.
patent: 5198407 (1993-03-01), Motegi et al.
patent: 5286704 (1994-02-01), Yoshikawa et al.
patent: 5314725 (1994-05-01), Morishita
patent: 5554211 (1996-09-01), Bokisa et al.
patent: 5695810 (1997-12-01), Dubin et al.
patent: 5824599 (1998-10-01), Schacham-Diamand et al.
patent: 5897673 (1999-04-01), Nishida et al.
patent: 5925415 (1999-07-01), Fry et al.
patent: 6063172 (2000-05-01), Bokisa et al.
patent: 6099624 (2000-08-01), Martyak
patent: 6117220 (2000-09-01), Kodama et al.
patent: 6156428 (2000-12-01), Gibson
patent: 6162343 (2000-12-01), Takami et al.
patent: 6197984 (2001-03-01), Makovetsky et al.
patent: 6265086 (2001-07-01), Harkness
patent: 6336962 (2002-01-01), Backus et al.
patent: 6423125 (2002-07-01), Ishibashi et al.
patent: 6555158 (2003-04-01), Yoshio et al.
patent: 6645567 (2003-11-01), Chebiam et al.
patent: 6680540 (2004-01-01), Nakano et al.
patent: 6749739 (2004-06-01), Chalyt et al.
patent: 6780456 (2004-08-01), Kunishi et al.
patent: 6797312 (2004-09-01), Kong et al.
patent: 6800185 (2004-10-01), Hasegawa et al.
patent: 6805915 (2004-10-01), Itabashi et al.
patent: 6902605 (2005-06-01), Kolics et al.
patent: 6902765 (2005-06-01), Brandes et al.
patent: 6908504 (2005-06-01), Chebiam et al.
patent: 6911067 (2005-06-01), Kolics et al.
patent: 6924232 (2005-08-01), Mathew et al.
patent: 7214650 (2007-05-01), Kasturi et al.
patent: 7332193 (2008-02-01), Valverde et al.
patent: 2002/0196119 (2002-12-01), Meigs et al.
patent: 2003/0052330 (2003-03-01), Klein
patent: 2003/0207560 (2003-11-01), Dubin et al.
patent: 2004/0035316 (2004-02-01), Chebiam et al.
patent: 2004/0038073 (2004-02-01), Chebiam et al.
patent: 2004/0076051 (2004-04-01), Klein
patent: 2004/0086646 (2004-05-01), Brandes et al.
patent: 2004/0096592 (2004-05-01), Chebiam et al.
patent: 2004/0104124 (2004-06-01), Cobley et al.
patent: 2004/0134375 (2004-07-01), Kolics et al.
patent: 2004/0144285 (2004-07-01), Stark et al.
patent: 2004/0200728 (2004-10-01), Hongo et al.
patent: 2004/0206631 (2004-10-01), Cobley et al.
patent: 2004/0245214 (2004-12-01), Katakabe et al.
patent: 2004/0250748 (2004-12-01), Ravenscroft et al.
patent: 2004/0253814 (2004-12-01), Cheng et al.
patent: 2004/0258836 (2004-12-01), Besenhard et al.
patent: 2005/0003255 (2005-01-01), Shimizu et al.
patent: 2005/0008786 (2005-01-01), Dubin et al.
patent: 2005/0009340 (2005-01-01), Saijo et al.
patent: 2005/0048773 (2005-03-01), Mathew et al.
patent: 2005/0072525 (2005-04-01), Pancham et al.
patent: 2005/0084615 (2005-04-01), Weidman et al.
patent: 2005/0085031 (2005-04-01), Lopatin et al.
patent: 2005/0089944 (2005-04-01), Shieh et al.
patent: 2005/0101130 (2005-05-01), Lopatin et al.
patent: 2005/0175080 (2005-08-01), Bouillett
patent: 2005/0212058 (2005-09-01), Huang et al.
patent: 2005/0222427 (2005-10-01), Sharpless et al.
patent: 2005/0258499 (2005-11-01), Huang et al.
patent: 2005/0261414 (2005-11-01), Mitsuhashi et al.
patent: 2005/0282384 (2005-12-01), Nawafune et al.
patent: 2006/0102487 (2006-05-01), Parsons et al.
patent: 2006/0172529 (2006-08-01), Shih et al.
patent: 2006/0197236 (2006-09-01), Basheer et al.
patent: 2006/0225605 (2006-10-01), Kloeckener et al.
patent: 2006/0280860 (2006-12-01), Paneccasio et al.
patent: 2007/0260017 (2007-11-01), Matsuda et al.
patent: 2008/0044643 (2008-02-01), Yokota et al.
Office Action dated Jul. 2, 2007, U.S. Appl. No. 11/230,912, filed Sep. 20, 2005.
Office Action dated Jul. 2, 2007, U.S. Appl. No. 11/243,631, filed Oct. 5, 2005.
Office Action dated Jun. 29, 2007, U.S. Appl. No. 11/243,876, filed Oct. 5, 2005.
International Search Report, PCT/US06/36479, dated Jul. 30, 2008, 2 pages.
Written Opinion, PCT/US06/36479, dated Jul. 30, 2008, 7 pages.
International Preliminary Report on Patentability, PCT/US2006/036479, dated Apr. 7, 2009, 8 pages.
Hirsch, S., et al., “Immersion Plating”,Metal Finishing, Guidebook and Directory Issue '89, Jan. 1989, pp. 402-407, vol. 67, No. 1A, Metals and Plastics Publications, Inc., Hackensack, New York.
Itabashi, T., et al., “Electroless Deposited CoWB for Copper Diffusion Barrier Metal”,IEEE, 2002, pp. 285-287.
Kohn, A., et al., “Characterization of Electroless Deposited Co(W,P) Thin Ims for Encapsulation of Copper Metallization”,Materials Science&Engineering A, 2001, pp. 18-25, vol. 302.
Lopatin, S.D., et al., “Thin Electroless Barrier for Copper Films”,Part of the SPIE Conference on Multilevel Interconnect Technology II, Sep. 1998, pp. 65-77, vol. 3508, Santa Clara, California.
Chen Qingyun
Hurtubise Richard
Paneccasio Vincent
Petrov Nicolai
Stritch Daniel
Enthone Inc.
Garcia Joannie A
Richards N Drew
Senniger Powers LLP
LandOfFree
Defectivity and process control of electroless deposition in... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Defectivity and process control of electroless deposition in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Defectivity and process control of electroless deposition in... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4081382