Defectivity and process control of electroless deposition in...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S761000, C438S776000, C438S782000, C257S635000, C257S766000, C204S157450, C204S157500, C204S633000

Reexamination Certificate

active

07410899

ABSTRACT:
Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.

REFERENCES:
patent: 3745039 (1973-07-01), Feldstein
patent: 3784457 (1974-01-01), Mizutani et al.
patent: 5221328 (1993-06-01), Bishop et al.
patent: 5314725 (1994-05-01), Morishita
patent: 5695810 (1997-12-01), Dubin et al.
patent: 5897673 (1999-04-01), Nishida et al.
patent: 5925415 (1999-07-01), Fry et al.
patent: 6146702 (2000-11-01), Zitko
patent: 6162343 (2000-12-01), Takami et al.
patent: 6265086 (2001-07-01), Harkness
patent: 6645567 (2003-11-01), Chebiam et al.
patent: 6860925 (2005-03-01), Soutar et al.
patent: 6902605 (2005-06-01), Kolics et al.
patent: 2003/0207560 (2003-11-01), Dubin et al.
patent: 2004/0096592 (2004-05-01), Chebiam et al.
patent: 2004/0134375 (2004-07-01), Kolics et al.
patent: 2004/0200728 (2004-10-01), Hongo et al.
patent: 2004/0245214 (2004-12-01), Katakabe et al.
patent: 2004/0253814 (2004-12-01), Cheng et al.
patent: 2004/0258836 (2004-12-01), Besenhard et al.
patent: 2005/0008786 (2005-01-01), Dubin et al.
patent: 2005/0009340 (2005-01-01), Saijo et al.
patent: 2005/0072525 (2005-04-01), Pancham et al.
patent: 2005/0084615 (2005-04-01), Weidman et al.
patent: 2005/0085031 (2005-04-01), Lopatin et al.
patent: 2005/0212058 (2005-09-01), Huang et al.
patent: 2005/0258499 (2005-11-01), Huang et al.
patent: 2006/0172529 (2006-08-01), Shih et al.
Cadorna, L., et al., “Electroless Plating—II. Electroless Cobalt from Alkaline Sulfamate Bath”, Physical Chemistry and Metallurgy, Polytechnic, Milan, pp. 177-190, Institute for Electrochemistry.
Hirsch, S., et al., “Immersion Plating”,Metal Finishing, Guidebook and Directory Issue '89, Jan. 1989, pp. 402-407, vol. 67, No. 1A, Metals and Plastics Publications, Inc., Hackensack, New York.
Itabashi, T., et al., “Electroless Deposited CoWB for Copper Diffusion Barrier Metal”,IEEE, 2002, pp. 285-287.
Kohn, A., et al., “Characterization of Electroless Deposited Co(W,P) Thin Ims for Encapsulation of Copper Metalllization”,Materials Science&Engineering A, 2001, pp. 18-25, vol. 302.
Lopatin, S.D., et al., “Thin Electroless Barrier for Copper Films”,Part of the SPIE Conference on Multilevel Interconnect Technology II, Sep. 1998, pp. 65-77, vol. 3508, Santa Clara, California.
Mallory, G., et al., “Chapter 18—Electroless Cobalt and Cobalt Alloys”,Electroless Plating Fundamentals&Applications, pp. 463-509, American Electroplaters and Surface Finishers Society, Orlando, Florida.
Office Action dated Jul. 10, 2007, U.S. Appl. No. 11/243,624, filed Oct. 5, 2005.

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