Static information storage and retrieval – Read/write circuit – Bad bit
Patent
1989-07-10
1990-07-03
Moffitt, James W.
Static information storage and retrieval
Read/write circuit
Bad bit
365201, 371 81, 371 102, G11C 800
Patent
active
049396943
ABSTRACT:
A self-testing and self-repairing memory system is presented as well as a method for using it and a method for making it. This memory system is constructed from memory chips that have passed an abbreviated wafer probe test. After the memory system is assembled, it tests itself to locate defective memory cells. The memory system may decide to correct these defective memory cells or it may decide to correct them using an error correction code engine. This memory system tests itself during field use to locate defective memory cells. Once these defective memory cells are located, the memory system uses the error correction code engine to correct these defective memory cells. When the error correction code engine becomes overburdened with defective memory cells, then the memory system replaces these defective memory cells.
REFERENCES:
patent: 4493075 (1985-01-01), Anderson et al.
patent: 4707810 (1987-11-01), Ferrant
Eaton Steven G.
Hanlon Lawrence R.
Keshner Marvin S.
Hewlett--Packard Company
Moffitt James W.
LandOfFree
Defect tolerant self-testing self-repairing memory system does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Defect tolerant self-testing self-repairing memory system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Defect tolerant self-testing self-repairing memory system will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1895937