Defect source analysis method, defect source analysis...

Image analysis – Applications – Manufacturing or product inspection

Reexamination Certificate

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C438S016000, C438S017000

Reexamination Certificate

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08073241

ABSTRACT:
An inspecting method increases the accuracy of a DSA (Defect Source Analysis) for thereby increasing the yield of semiconductor devices which are manufactured. For performing a DSA using data of a defect inspecting process obtained when wiring patterns are formed on a wafer and data of a VC (Voltage Contrast) inspecting process performed after the wiring patterns are formed, a rectangular DSA area is established in relation to a wiring pattern in which a nonconductive area is detected, based on the shape of the wiring pattern. For example, if three defects are detected in the defect inspecting process, then it is possible to select only at least one of those defects which affects the wiring pattern in the DSA area. Since fabrication steps can appropriately be evaluated based on the selected defect, suitable actions may be taken for any problematic fabrication step based on the evaluation of the fabrication steps.

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Japanese Office Action dated Apr. 8, 2008, issued in corresponding Japanese Patent Application No. 2005-237551 and partial English translation.

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