Defect review method and device for semiconductor device

Details Defect review method and device for semiconductor device Defect review method and device for semiconductor device

2008-02-19

2009-12-01

Wells, Nikita (Department: 2881)

Radiant energy

Inspection of solids or liquids by charged particles

C250S307000, C250S310000, C250S311000, C250S492200, C250S492220, C250S492300

Reexamination Certificate

active

07626163

ABSTRACT:
A defect review method and device of the invention solves the previous problem of a long inspection time that is caused by the increase of a process-margin-narrow pattern as a result of the size reduction of a semiconductor device. With the method and device of the invention, an SEM (Scanning Electron Microscope) image is derived by capturing an image of a process-margin-narrow pattern portion extracted based on lithography simulation with image-capturing conditions of a relatively low resolution. The resulting SEM image is compared with CAD (Computer Aided Design) data for extraction of any abnormal section. An image of the area extracted as being abnormal is captured again, and the resulting high-resolution SEM image is compared again with the CAD data for defect classification based on the feature amount of the image, e.g., shape deformation. The abnormal section is then measured in dimension at a position preset for the classification result so that the time taken for inspection can be prevented from increasing.

REFERENCES:
patent: 7109483 (2006-09-01), Nakasuji et al.
patent: 2007/0145270 (2007-06-01), Miyamoto et al.
patent: 2008/0121804 (2008-05-01), Nakasuji et al.
patent: 2009/0010527 (2009-01-01), Honda et al.
patent: 2009/0058437 (2009-03-01), Honda et al.
patent: 10-135288 (1998-05-01), None
patent: 2002-033365 (2002-01-01), None

Affiliated with

Also associated with

Rating

Defect review method and device for semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Defect review method and device for semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Defect review method and device for semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4081977