Defect reduction in semiconductor materials

Details Defect reduction in semiconductor materials Defect reduction in semiconductor materials

2008-07-15

2008-07-15

Nguyen, Tuan H (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S481000

Reexamination Certificate

active

07399684

ABSTRACT:
An initial epitaxial layer of GaN is grown on a sapphire substrate. The epitaxial layer is then etched in a reactive ion etch (RIE) chamber. This etching acts preferentially at defects, causing them to become enlarged cavities. The cavities are too large in proportion to the crystal lattice to act as defects in the usual sense, and so a further GaN epitaxial layer fills into the cavities. Thus, propagation of defects is avoided.

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