Defect inspection method and its system

Radiant energy – Inspection of solids or liquids by charged particles

Reexamination Certificate

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C250S307000, C250S310000, C250S311000, C250S3960ML, C250S492220, C250S492200

Reexamination Certificate

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07943903

ABSTRACT:
A method for enabling management of fatal defects of semiconductor integrated patterns easily, the method enables storing of design data of each pattern designed by a semiconductor integrated circuit designer, as well as storing of design intent data having pattern importance levels ranked according to their design intents respectively. The method also enables anticipating of defects to be generated systematically due to the characteristics of the subject exposure system, etc. while each designed circuit pattern is exposed and delineated onto a wafer in a simulation carried out beforehand and storing those defects as hot spot information. Furthermore, the method also enables combining of the design intent data with hot spot information to limit inspection spots that might include systematic defects at high possibility with respect to the characteristics of the object semiconductor integrated circuit and shorten the defect inspection time significantly.

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patent: 6799130 (2004-09-01), Okabe et al.
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patent: 2009/0146057 (2009-06-01), Sohda et al.
patent: 2009/0232385 (2009-09-01), Matsuoka et al.
Norihiko Miyazaki, et al., “Design for Manufacturability Production Management Activity Report”, Proc. of SPIE, vol. 6283, pp. 628302-1-628302-10, (2006).

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