Defect inspection instrument and positron beam apparatus

Details Defect inspection instrument and positron beam apparatus Defect inspection instrument and positron beam apparatus

2006-11-28

2006-11-28

Porta, David (Department: 2884)

Radiant energy

Inspection of solids or liquids by charged particles

Including a radioactive source

C250S307000, C250S309000, C250S310000, C250S311000

Reexamination Certificate

active

07141790

ABSTRACT:
The purpose of the present invention is to inspect the position, number, and size of fine defects in a variety of solid state materials, including a semiconductor device and metallic materials, with a high spatial resolution of nanometer order. The positron irradiation function is installed in the converged electron beam apparatus. The defect location information is obtained from the converged electron beam location information, and the number and size of defects are obtained from the detected information of γ-rays created by pair annihilation of electrons and positrons, and this two-dimensional distribution information is displayed in the monitor. Information on ultra-fine defects in a crystal can be provided with high-speed and high-resolution, and nondestructively in the case of a semiconductor wafer.

REFERENCES:
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Kawasuso et al. Positron Annihilations Associated with Defects in Plastically Deformed Si. Japanese Journal of Applied Physics, Part 1, Sep. 1995, vol. 34, No. 9A, pp. 4579-4586. (abstract) INSPEC [online][retrieved on Nov. 30, 2005].
Kogel, G., “Microscopes/microprobes”, Applied Surface Science, Sep. 16-22, 2001, vol. 194, No. 1-4, pp. 200-209.

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