Defect-induced control of the structure of boron nitride

Details Defect-induced control of the structure of boron nitride Defect-induced control of the structure of boron nitride

1992-02-07

1994-03-22

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419216, C23C 1434

Patent

active

052961192

ABSTRACT:
A method of controlling defects in boron nitride films in order to stabilize certain crystallographic structures is disclosed. Such defects include, for example, nitrogen vacancies, boron interstitials, and substitutional dopants. In particular, films produced by the method of sputtering in pure inert gas atmospheres have a tetrahedrally coordinated structure and are rich in nitrogen vacancies. Films produced by the same method in inert gas with a sufficient nitrogen overpressure have a completely stoichiometric graphitic structure. These results are expected for any defect type having a greater free energy of formation in the graphitic form of boron nitride than in the tetrahedral forms. The methods of the invention are applicable to any film growth technique capable of incorporating such defects.

REFERENCES:
patent: 4412899 (1983-11-01), Beale
patent: 4656052 (1987-04-01), Satoo et al.
patent: 4683043 (1987-07-01), Melton et al.
patent: 4941430 (1990-07-01), Watanabe et al.
M. D. Wiggins et al, J. Vac. Sci. Technol., vol. A2(2), Apr.-Jun. 1984, pp. 322-325.

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