Defect induced buried oxide (DIBOX) for throughput SOI

Details Defect induced buried oxide (DIBOX) for throughput SOI Defect induced buried oxide (DIBOX) for throughput SOI

1997-12-22

1999-07-27

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438766, 438154, 257347, H01L 21265

Patent

active

059306432

ABSTRACT:
A method of fabricating a defect induced buried oxide (DIBOX) region in a semiconductor substrate utilizing a first low energy implantation step to create a stable defect region; a second low energy implantation step to create an amorphous layer adjacent to the stable defect region; oxidation and, optionally, annealing, is provided. Silicon-on-insulator (SOI) materials comprising said semiconductor substrate having said DIBOX is also provided herein.

REFERENCES:
patent: 4749660 (1988-06-01), Short et al.
patent: 4786608 (1988-11-01), Griffith
patent: 4902642 (1990-02-01), Mao et al.
patent: 5279978 (1994-01-01), See et al.
patent: 5519336 (1996-05-01), Liu et al.
Stanley Wolf Silicon processing for the VSLI Era Lattice Press pp. 72-73, 1990.

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